The influence of perpendicular transport behavior on the properties of n-i-p type amorphous silicon solar cells
Identifieur interne : 000014 ( Main/Repository ); précédent : 000013; suivant : 000015The influence of perpendicular transport behavior on the properties of n-i-p type amorphous silicon solar cells
Auteurs : RBID : Pascal:14-0027507Descripteurs français
- Pascal (Inist)
- Semiconducteur type p, Matériau amorphe, Cellule solaire silicium, Addition bore, Radiofréquence, Méthode PECVD, Dépôt chimique phase vapeur, Basse température, Propriété transport, Addition étain, Conductivité obscurité, Barrière potentiel, Courant obscurité, Caractéristique courant tension, Diode, Rendement élevé, Dopage, Hétérojonction, Optimisation, Haute tension, Tension circuit ouvert, Semiconducteur type n, Oxyde d'indium, Silicium, Matériau cristallin, Microcristal, Carbure de silicium, Nanocristal, ITO, Couche fenêtre, Cellule solaire monojonction.
- Wicri :
- concept : Matériau amorphe, Dopage.
English descriptors
- KwdEn :
- Amorphous material, Boron addition, Chemical vapor deposition, Crystalline material, Dark conductivity, Dark current, Diode, Doping, Heterojunction, High efficiency, High voltage, Indium oxide, Low temperature, Microcrystal, Nanocrystal, Open circuit voltage, Optimization, PECVD, Potential barrier, Radiofrequency, Silicon, Silicon carbide, Silicon solar cells, Single junction solar cell, Tin addition, Transport properties, Voltage current curve, Window layer, n type semiconductor, p type semiconductor.
Abstract
Different types of boron-doped window layers have been prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at a low temperature of 150 °C. The effects of perpendicular transport behavior on the properties of n-i-p type amorphous silicon (a-Si) solar cells, which involve inner perpendicular conductivity of p layers, perpendicular transport properties at p/ITO interfaces and recombination kinetics at i/p interfaces have been investigated by perpendicular dark conductivity, potential barrier at p/ITO and dark current-voltage characteristics of n-i-p a-Si diodes, respectively. High doping efficiency in the window layers with nano-sized silicon crystals has been observed to facilitate the significant improvement of perpendicular dark conductivity and transport behavior at p/ITO interfaces. The dark current-voltage characteristics indicated intrinsic a-Si/p-type microcrystalline silicon heterojunction transitions possessed much higher recombination rate and decreased value of built-in potential in the intrinsic layer. By optimizing the process parameters, high open circuit voltage (0.96 V) and fill factor (0.73) were achieved for n-i-p type a-Si single junction solar cell with p-type amorphous silicon carbide/nanocrystalline silicon hybrid window layer.
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Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University)</s1><s2>Tianjin 300071</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300071</wicri:noRegion></affiliation></author><author><name>JIANJUN ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University)</s1><s2>Tianjin 300071</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 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Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University)</s1><s2>Tianjin 300071</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300071</wicri:noRegion></affiliation></author><author><name>XINLIANG CHEN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University)</s1><s2>Tianjin 300071</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300071</wicri:noRegion></affiliation></author><author><name>XIAODAN ZHANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University)</s1><s2>Tianjin 300071</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300071</wicri:noRegion></affiliation></author><author><name>XINHUA GENG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University)</s1><s2>Tianjin 300071</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300071</wicri:noRegion></affiliation></author><author><name>YING ZHAO</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University)</s1><s2>Tianjin 300071</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Tianjin 300071</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0027507</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0027507 INIST</idno><idno type="RBID">Pascal:14-0027507</idno><idno type="wicri:Area/Main/Corpus">000249</idno><idno type="wicri:Area/Main/Repository">000014</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous material</term><term>Boron addition</term><term>Chemical vapor deposition</term><term>Crystalline material</term><term>Dark conductivity</term><term>Dark current</term><term>Diode</term><term>Doping</term><term>Heterojunction</term><term>High efficiency</term><term>High voltage</term><term>Indium oxide</term><term>Low temperature</term><term>Microcrystal</term><term>Nanocrystal</term><term>Open circuit voltage</term><term>Optimization</term><term>PECVD</term><term>Potential barrier</term><term>Radiofrequency</term><term>Silicon</term><term>Silicon carbide</term><term>Silicon solar cells</term><term>Single junction solar cell</term><term>Tin addition</term><term>Transport properties</term><term>Voltage current curve</term><term>Window layer</term><term>n type semiconductor</term><term>p type semiconductor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur type p</term><term>Matériau amorphe</term><term>Cellule solaire silicium</term><term>Addition bore</term><term>Radiofréquence</term><term>Méthode PECVD</term><term>Dépôt chimique phase vapeur</term><term>Basse température</term><term>Propriété transport</term><term>Addition étain</term><term>Conductivité obscurité</term><term>Barrière potentiel</term><term>Courant obscurité</term><term>Caractéristique courant tension</term><term>Diode</term><term>Rendement élevé</term><term>Dopage</term><term>Hétérojonction</term><term>Optimisation</term><term>Haute tension</term><term>Tension circuit ouvert</term><term>Semiconducteur type n</term><term>Oxyde d'indium</term><term>Silicium</term><term>Matériau cristallin</term><term>Microcristal</term><term>Carbure de silicium</term><term>Nanocristal</term><term>ITO</term><term>Couche fenêtre</term><term>Cellule solaire monojonction</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Matériau amorphe</term><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Different types of boron-doped window layers have been prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at a low temperature of 150 °C. The effects of perpendicular transport behavior on the properties of n-i-p type amorphous silicon (a-Si) solar cells, which involve inner perpendicular conductivity of p layers, perpendicular transport properties at p/ITO interfaces and recombination kinetics at i/p interfaces have been investigated by perpendicular dark conductivity, potential barrier at p/ITO and dark current-voltage characteristics of n-i-p a-Si diodes, respectively. High doping efficiency in the window layers with nano-sized silicon crystals has been observed to facilitate the significant improvement of perpendicular dark conductivity and transport behavior at p/ITO interfaces. The dark current-voltage characteristics indicated intrinsic a-Si/p-type microcrystalline silicon heterojunction transitions possessed much higher recombination rate and decreased value of built-in potential in the intrinsic layer. By optimizing the process parameters, high open circuit voltage (0.96 V) and fill factor (0.73) were achieved for n-i-p type a-Si single junction solar cell with p-type amorphous silicon carbide/nanocrystalline silicon hybrid window layer.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>120</s2></fA05><fA06><s3>p. b</s3></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The influence of perpendicular transport behavior on the properties of n-i-p type amorphous silicon solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>JUN MA</s1></fA11><fA11 i1="02" i2="1"><s1>JIAN NI</s1></fA11><fA11 i1="03" i2="1"><s1>JIANJUN ZHANG</s1></fA11><fA11 i1="04" i2="1"><s1>QUN LIU</s1></fA11><fA11 i1="05" i2="1"><s1>GUOFU HOU</s1></fA11><fA11 i1="06" i2="1"><s1>XINLIANG CHEN</s1></fA11><fA11 i1="07" i2="1"><s1>XIAODAN ZHANG</s1></fA11><fA11 i1="08" i2="1"><s1>XINHUA GENG</s1></fA11><fA11 i1="09" i2="1"><s1>YING ZHAO</s1></fA11><fA14 i1="01"><s1>Institute of Photo-electronics Thin Film Devices and Technique of Nankai University, Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-Electronic Information Science and Technology of Ministry of Education (Nankai University)</s1><s2>Tianjin 300071</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA20><s1>635-641</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000508232450270</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0027507</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Different types of boron-doped window layers have been prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at a low temperature of 150 °C. The effects of perpendicular transport behavior on the properties of n-i-p type amorphous silicon (a-Si) solar cells, which involve inner perpendicular conductivity of p layers, perpendicular transport properties at p/ITO interfaces and recombination kinetics at i/p interfaces have been investigated by perpendicular dark conductivity, potential barrier at p/ITO and dark current-voltage characteristics of n-i-p a-Si diodes, respectively. High doping efficiency in the window layers with nano-sized silicon crystals has been observed to facilitate the significant improvement of perpendicular dark conductivity and transport behavior at p/ITO interfaces. The dark current-voltage characteristics indicated intrinsic a-Si/p-type microcrystalline silicon heterojunction transitions possessed much higher recombination rate and decreased value of built-in potential in the intrinsic layer. By optimizing the process parameters, high open circuit voltage (0.96 V) and fill factor (0.73) were achieved for n-i-p type a-Si single junction solar cell with p-type amorphous silicon carbide/nanocrystalline silicon hybrid window layer.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D05I03D</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Semiconducteur type p</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>p type semiconductor</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Semiconductor tipo p</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Matériau amorphe</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Amorphous material</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Material amorfo</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Cellule solaire silicium</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Silicon solar cells</s0><s5>03</s5></fC03><fC03 i1="04" 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i2="X" l="SPA"><s0>Corriente obscuridad</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Caractéristique courant tension</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Voltage current curve</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Característica corriente tensión</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Diode</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Diode</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Diodo</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Rendement élevé</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>High efficiency</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Rendimiento elevado</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Dopage</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Doping</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Doping</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Hétérojonction</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Heterojunction</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Heterounión</s0><s5>18</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Optimisation</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Optimization</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Optimización</s0><s5>19</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Haute tension</s0><s5>20</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>High voltage</s0><s5>20</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Alta tensión</s0><s5>20</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Tension circuit ouvert</s0><s5>21</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Open circuit voltage</s0><s5>21</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Semiconducteur type n</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>n type semiconductor</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Semiconductor tipo n</s0><s5>22</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Indium oxide</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Indio óxido</s0><s5>23</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>24</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>24</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Silicio</s0><s2>NC</s2><s5>24</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Matériau cristallin</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Crystalline material</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Material cristalino</s0><s5>25</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Microcristal</s0><s5>26</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Microcrystal</s0><s5>26</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Microcristal</s0><s5>26</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Carbure de silicium</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Silicon carbide</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Silicio carburo</s0><s5>27</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Nanocristal</s0><s5>28</s5></fC03><fC03 i1="28" i2="X" l="ENG"><s0>Nanocrystal</s0><s5>28</s5></fC03><fC03 i1="28" i2="X" l="SPA"><s0>Nanocristal</s0><s5>28</s5></fC03><fC03 i1="29" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>Couche fenêtre</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="30" i2="X" l="ENG"><s0>Window layer</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="31" i2="X" l="FRE"><s0>Cellule solaire monojonction</s0><s4>CD</s4><s5>97</s5></fC03><fC03 i1="31" i2="X" l="ENG"><s0>Single junction solar cell</s0><s4>CD</s4><s5>97</s5></fC03><fN21><s1>027</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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